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| NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 FEATURES * HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz * OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz * LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz * GATE LENGTH: LG = 0.8 m (recessed gate) * GATE WIDTH: WG = 400 m 2 OUTLINE DIMENSION (Units in mm) PACKAGE OUTLINE SO1 2.0 0.2 1 2. 0 0. 2 DESCRIPTION NEC's NE722S01 is a low cost GaAs MESFET suitable for both amplifier and oscillator applications through X-band. The device features a 0.8 micron recessed gate, triple epitaxial technology and is fabricated using ion implantation for improved RF and DC performance and uniformity. This device's low phase noise and high fT makes it a excellent choice for oscillator applications on a digital LNB (Low Noise Block). The NE722S01 is housed in a low cost plastic package which is available in Tape and Reel. NEC's stringent quality assurance and test procedures ensure the highest reliability performance. 0.125 0.05 P 3 0.65 TYP 1.9 0.2 1.6 4 0.5 TYP 2.00.2 1. Source 2. Drain 3. Source 4. Gate 1.5 MAX 0.4 MAX 4.0 0.2 APPLICATIONS * C to X band low noise amplifiers * C to X band oscillators ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS IGSO IDSS VGS gm GS P1dB NF Ga PARAMETERS AND CONDITIONS Gate to Source Leak Current, VGS = -5 V Saturated Drain Current, VDS = 3 V, VGS = 0 V Gate to Source Cutoff Voltage, VDS = 3 V, ID = 100 A Transconductance, VDS = 3 V, IDS = 30 mA Power Gain, VDS = 3 V, IDS = 30 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point at VDS = 3 V, IDS = 30 mA, f = 12 GHz Noise Figure, VDS = 3 V, IDS = 10 mA, f = 4 GHz Associated Gain, VDS = 3 V, IDS = 10 mA, f = 4 GHz UNITS uA mA V mS dB dBm dB dB - - MIN - 60 -0.5 20 - NE722S01 S01 TYP 1.0 90 - 45 6 15.0 0.9 12 - _ MAX 10 120 -4.0 - - California Eastern Laboratories NE722S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGS VGD IDS PT PIN TCH TSTG PARAMETERS Drain to Source Voltage Gate to Source Voltage Gate to Drain Voltage Drain Current Total Power Dissipation Input Power Channel Temperature Storage Temperature UNITS V V V mA mW mW C C RATINGS 5.0 -5.0 -6.0 IDSS 250 40 125 -65 to +125 RECOMMENDED OPERATING CONDITIONS (TA = 25C) PART NUMBER SYMBOLS PARAMETERS Drain to Source Voltage VDS IDS Drain Current NE722S01 UNITS MIN TYP MAX V 3 4 mA 30 40 ORDERING INFORMATION PART NUMBER NE722S01-T1 NE722S01-T1B1 Note: 1. Available if quantity is over 100k per month SUPPLY FORM Tape & Reel 1000 pcs/reel Tape & Reel 4000 pcs/reel MARKING P Note: 1. Operation in excess of any one of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 500 (TA = 25C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 Total Power Dissipation, (PT) mW VGS = 0.0 V Drain Current, IDS (mA) 400 80 300 60 -0.5 V 200 40 -1.0 V 100 20 -2.0 V 0 50 100 150 200 250 0 1 2 3 4 5 Ambient Temperature, TA (C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY 20 Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, |S21S|2 (dB) VDS = 3.0 V 80 MSG. 16 VDS = 3 V IDS = 10 mA Drain Current, IDS (mA) 60 12 |S21S| 8 2 40 MAG. 20 4 |S21| (K K 2 - 1 ). |S12| When K 1, MAG is undefined and MSG values are used. 2 2 2 |S21| MSG = , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = 0 -4.0 -2.0 0 0 0.5 1 5 10 14 20 50 Gate to Source Voltage, VGS (V) Frequency, f (GHz) Note: 1. Gain Calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE722S01 TYPICAL PERFORMANCE CURVES OUTPUT POWER vs. INPUT POWER 20 VDS = 3.0 V, ID = 30 mA fin = 12 GHz (TA = 25C) Output Power, Pout (dBm) 15 10 5 0 -5 -10 -15 -10 -5 0 5 10 15 Input Power, Pin (dBm) NE722S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) NE722S01 VDS = 3.0 V, IDS = 10 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 MAG 0.912 0.876 0.828 0.784 0.737 0.699 0.660 0.620 0.583 0.547 0.516 0.496 0.500 0.510 0.526 0.540 0.553 0.566 0.576 0.592 0.608 0.640 0.665 0.693 0.718 0.744 0.759 0.756 0.750 0.738 0.728 0.721 0.721 S11 ANG -44.0 -56.1 -68.0 -79.3 -89.5 -99.3 -109.0 -119.0 -130.6 -143.8 -158.5 -173.7 172.6 159.9 148.4 138.4 129.9 120.6 111.3 101.8 92.8 85.2 79.1 73.3 69.3 64.8 59.6 55.5 51.0 45.4 40.9 36.4 32.5 MAG 3.100 3.037 2.935 2.819 2.696 2.589 2.499 2.420 2.355 2.283 2.196 2.098 2.016 1.920 1.834 1.749 1.676 1.608 1.542 1.470 1.401 1.325 1.256 1.183 1.111 1.045 0.966 0.893 0.839 0.777 0.714 0.676 0.624 S21 ANG 136.2 124.9 113.9 103.7 94.2 85.3 76.6 67.9 59.4 50.1 41.0 32.2 23.7 15.3 7.2 -0.6 -7.9 -15.8 -23.5 -31.1 -38.4 -45.7 -52.7 -59.7 -66.4 -73.3 -79.7 -85.4 -91.0 -96.7 -101.5 -105.7 -109.8 MAG 0.077 0.091 0.105 0.115 0.124 0.130 0.136 0.140 0.146 0.148 0.151 0.149 0.152 0.150 0.151 0.151 0.152 0.156 0.157 0.157 0.158 0.159 0.160 0.158 0.162 0.163 0.159 0.159 0.160 0.158 0.158 0.156 0.158 S12 ANG 59.0 51.2 42.9 36.2 30.0 24.7 19.1 14.1 9.1 3.8 -1.6 -6.6 -10.1 -13.6 -17.3 -20.3 -23.2 -26.3 -29.8 -32.9 -35.7 -38.0 -41.3 -44.5 -47.0 -49.5 -53.4 -55.8 -57.6 -61.4 -63.1 -65.9 -68.4 MAG 0.659 0.629 0.597 0.570 0.546 0.529 0.514 0.495 0.475 0.447 0.408 0.366 0.331 0.298 0.274 0.265 0.275 0.297 0.312 0.328 0.340 0.339 0.341 0.356 0.386 0.421 0.474 0.516 0.563 0.601 0.624 0.628 0.625 S22 ANG -30.2 -38.0 -46.4 -53.5 -60.9 -67.2 -73.6 -79.6 -85.2 -91.5 -97.0 -103.7 -110.8 -120.4 -133.2 -147.9 -160.7 -172.7 178.5 171.0 163.5 155.6 145.5 133.8 122.3 111.6 104.4 98.7 95.8 92.8 89.4 86.9 82.2 Note: 1. Gain Calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE722S01 TYPICAL SCATTERING PARAMETERS (TA = 25C) NE722S01 VDS = 3.0 V, IDS = 30 mA FREQUENCY GHz 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 MAG 0.896 0.851 0.799 0.753 0.705 0.666 0.625 0.586 0.553 0.521 0.497 0.489 0.501 0.519 0.540 0.562 0.575 0.589 0.602 0.619 0.633 0.666 0.690 0.715 0.740 0.769 0.780 0.778 0.774 0.759 0.750 0.739 0.741 S11 ANG -48.3 -61.5 -74.1 -86.1 -97.0 -107.3 -117.5 -128.3 -140.6 -154.2 -169.4 175.8 162.9 151.0 140.4 131.2 123.2 114.3 105.5 96.4 88.0 80.9 75.2 70.0 66.4 62.0 57.0 52.5 48.2 42.7 38.1 33.9 30.2 MAG 3.721 3.606 3.449 3.275 3.102 2.957 2.834 2.724 2.627 2.522 2.402 2.281 2.176 2.062 1.963 1.865 1.786 1.709 1.637 1.554 1.480 1.400 1.321 1.241 1.169 1.101 1.021 0.945 0.888 0.824 0.767 0.721 0.672 S21 ANG 134.0 122.4 111.3 101.1 91.6 82.7 74.0 65.3 56.8 47.7 39.0 30.5 22.5 14.5 6.8 -0.7 -7.8 -15.4 -22.9 -30.2 -37.4 -44.5 -51.1 -57.9 -64.2 -70.8 -77.1 -82.6 -88.0 -93.4 -98.3 -102.3 -106.6 MAG 0.063 0.077 0.086 0.095 0.102 0.106 0.111 0.115 0.122 0.125 0.128 0.128 0.131 0.135 0.139 0.142 0.146 0.151 0.156 0.161 0.163 0.168 0.171 0.173 0.173 0.174 0.178 0.175 0.176 0.176 0.174 0.175 0.176 S12 ANG 59.9 53.2 45.1 39.6 34.1 29.5 24.9 20.6 17.0 12.6 8.5 5.0 1.8 -1.2 -3.4 -6.8 -9.9 -12.8 -16.7 -20.5 -23.9 -27.4 -30.5 -33.9 -37.3 -41.0 -45.3 -48.6 -51.4 -56.1 -58.3 -61.1 -63.3 MAG 0.547 0.519 0.489 0.464 0.443 0.431 0.419 0.406 0.390 0.366 0.334 0.296 0.267 0.234 0.209 0.206 0.221 0.246 0.265 0.285 0.299 0.303 0.307 0.326 0.358 0.396 0.450 0.494 0.540 0.578 0.601 0.604 0.599 S22 ANG -29.6 -37.4 -45.4 -52.6 -59.5 -65.5 -71.5 -76.9 -82.2 -88.2 -93.4 -99.7 -106.8 -117.8 -132.7 -150.0 -164.3 -177.2 173.7 166.1 158.1 149.9 139.1 127.4 116.2 106.2 99.5 94.8 92.0 89.4 86.3 84.0 79.2 Note: 1. Gain Calculation: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE722S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 1 ohms 0.71nH Lsx 0.13nH Rsx 0.01 ohms Q1 0.5nH Rdx 1 ohms CGS_PKG 0.08pF CDS_PKG 0.1PF SOURCE FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA TQGAMMA TQGAMMAAC Q TQDELTA VBI IS N RIS RID TAU CDS RDB CBS CGS CGD DELTA1 DELTA2 FC VBR (1) ADS TOM Model (2) To simulate phase noise using AF/KF: AF = 1.5 KF = 2e-10 Q1 -2.24 0 8 0.055 0.04 0.05 1.5 0.25 1 1e-14 1.3 0 0 3e-12 0.19e-12 250 1e-9 0.92e-12 0.05e-12 0.3 0.3 0.5 Infinity Parameters RG RD RS RGMET TNOM XTI EG VTOTC BETATCE FFE FNC(2) R P C Q1 8 0.5 6 0 27 3 1.43 0 0 1 150e-6 0.5 1 0.9 UNITS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 2 V to 4 V, ID = 10 mA to 40 mA Date: 02/2002 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. 07/01/2004 A Business Partner of NEC Compound Semiconductor Devices, Ltd. |
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